BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 78

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

3.7
3.7.1 Base Station transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview
Device naming conventions RF power base stations transistors
Why choose NXP Semiconductors‘ RF power transistors for base stations:
` Leading technology (generation 6 and 7 of LDMOS)
` Highest (system) efficiency
` Best ruggedness
` Advanced Doherty amplifier designs
` Industry’s first 3.8 GHz Doherty
` Industry’s first fully integrated Doherty amplifier
NXP offers complete line-ups of RF power transistors operation from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.
3.7.1.1
80
B: semiconductor die made of Si
B: semiconductor die made of Si
driver
driver
driver
driver
driver
final
final
final
final
final
B L F 6 G
B L F 6 G
Function
NEW : RF power transistor selection guide on www.nxp.com/rfpower
L: high frequency power transistor
L: high frequency power transistor
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
LDMOS technology generation
LDMOS technology generation
G: standard LDMOS
G: standard LDMOS
NXP Semiconductors RF Manual 14
Easy-to-use parametric filters help you to choose the right RF
power transistor for your design.
RF power transistors
operating frequency (in 100MHz; maximum)
operating frequency (in 100MHz; maximum)
0.7 - 1.0 GHz line-up
22 L S
22 L S
BLF6G21-10G
BLM6G10-30
BLM6G10-30G
BLF6G10(S)-45
BLF6G10L(S)-40BRN
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF6G10(LS)-200RN
BLF6G10L(S)-260PRN
BLF6G07L(S)-260PBM
option: low thermal resistivity
option: low thermal resistivity
option: earless package
option: earless package
P1dB power
P1dB power
-45 P R B N G
-45 P R B N G
Type
push-pull device
push-pull device
enhanced ruggedness
enhanced ruggedness
option: current sense lead
option: current sense lead
specialty
specialty
gullwing-shaped leads
gullwing-shaped leads
SOT1112A3/B3
SOT1110A3/B3
SOT539A3/B3
SOT834-1
SOT822-1
SOT538A
Package
SOT608
SOT502
SOT502
SOT502
th
edition
700 - 1000
700 - 1000
700 - 1000
700 - 1000
700 - 1000
688 - 1000
10 - 2200
728 - 960
728 - 960
728 - 810
MHz
f
range
P
26.5
0.7
2.5
W
32
40
40
60
L(AV)
2
2
1
28.5
11.5
11.5
η
7.8
15
15
28
27
27
31
%
D
18.5
22.5
22.5
dB
G
29
29
15
21
20
27
21
p
@V
22
28
28
28
28
23
28
32
28
28
V
DS