BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 56

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

58
Varicaps (single-ended &
differential)
Other devices
Mask count
Features
Release for production
CMOS/Bipolar
LV NPN Ft/Fmax (GHz)
HV NPN Ft/Fmax (GHz)
NPN BVce0: HV/LV **
V-PNP Ft / BVcb0 (GHz / V)
CMOS Voltage /
Dual Gate
Noise figure NPN (dB)
RFCMOS Ft (GHz)
Isolation (60 dB @ 10 GHz)
Interconnection
(AlCu with CMP W Plugs)
Capacitors
Resistors (Ohm/sq)
Inductors (1.5nH @ 2 Ghz)
- scalable
BiCMOS
f
t
QUBiC4Xi
/f
QUBiC4X
QUBiC4+
max
NXP Semiconductors RF Manual 14
= 37/90 GHz
Q > 21, Thick Metal, Deep trench isolation,
Poly (64/220/330/2K), Active (12, 57),
SiGe:C
f
SiGe
f
t
t
/ f
/ f
CMOS 0.25um, Bipolar 0.4um,
Double poly, Deep trench, Si
max
max
High Precision SiCr (270)
2x single ended, Q > 40
3x differential, Q 30-50
31 / 32 (MIM) / 33 (DG)
LPNP, Isolated NMOS
5 LM, 3 µm top Metal
NMOS 58, PMOS 19
NW, DN, Poly-Poly
= 180/200 GHz
= 137/180 GHz
QUBiC4/4+/4DG
High R substrate
2002/2004/2006
th
5fF/um2 MIM
STI and DTI
edition
5.9 / 3.8 V
2.5 / 3.3 V
2GHz: 1.1
37/90 (Si)
28/70 (Si)
7 / >9
+HVNPN
+VPNP
-4ML
+TFR
+DG
Q > 21, Thick Metal, Deep trench isolation,
Poly (64/220/330/2K), Active (12, 57),
Double poly, Deep trench, SiGe:C
CMOS 0.25um, Bipolar LV 0.4um,
QUBiC4+
` Baseline, 0.25um CMOS, single poly, 5 metal
` Digital gate density 26k gates/mm
` f
` +TFR – Thin Film Resistor
` +DG – Dual Gate Oxide MOS
` +HVNPN – High Voltage NPN
` +VPNP – Vertical PNP
` -4ML – high density 5fF/µm
` Wide range of active and high quality passive devices
` Optimized for up to 5GHz applications
QUBiC4X
` SiGe:C process
` f
` optimized for up to 15 GHz applications
QUBiC4Xi
` Improves fT/fMAX up to 180/200 GHz
` Optimized for ultra-low noise for microwave above 10 GHz
LPNP, Isolated-NMOS tbd
2x single ended, Q > 40
High Precision SiCr tbd
3x differential, Q 30-50
5 LM, 3 µm top Metal
NMOS 58, PMOS 19
T
T
NW, DN, Poly-Poly
/f
/f
High R substrate
137/180 (SiGe:C)
60/120 (SiGe:C)
MAX
MAX
5fF/um2 MIM
STI and DTI
10GHz: 1.0
QUBiC4X
3.2 / 2.0 V
35 (MIM)
planned
2 µm M4
= 37/90 GHz
= 137/180 GHz
2006
2.5 V
Q > 21, Thick Metal, Deep trench isolation,
2
MIM capacitor
Poly (64/220/330/2K), Active (12, 57),
Double poly, Deep trench, SiGe:C
CMOS 0.25um, Bipolar LV 0.3um,
LPNP, Isolated-NMOS tbd
2x single ended, Q > 40
2
High Precision SiCr tbd
3x differential, Q 30-50
5 LM, 3 µm top Metal
NMOS 58, PMOS 19
NW, DN, Poly-Poly
180/200 (SiGe:C)
High R substrate
5fF/um2 MIM
tbd (SiGe:C)
STI and DTI
10GHz: 0.7
QUBiC4X
2.5 / 1.4 V
35 (MIM)
planned
2008
2.5 V