BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 81

IC BASESTATION FINAL SOT502B

BLF6G10LS-135R,112

Manufacturer Part Number
BLF6G10LS-135R,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors

Specifications of BLF6G10LS-135R,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
21dB
Voltage - Rated
65V
Current Rating
32A
Current - Test
950mA
Voltage - Test
28V
Power - Output
26.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
32 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
26.5W(Typ)
Power Gain (typ)@vds
21@28VdB
Frequency (min)
869MHz
Frequency (max)
894MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13S
Drain Source Resistance (max)
100(Typ)@6.15Vmohm
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
28%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061247112
BLF6G10LS-135R
BLF6G10LS-135R
3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors
http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview
Why choose NXP Semiconductors’ RF power transistors for broadcast / ISM applications:
` Highest power
` Best ruggedness
` Best broadband performance
` Best-in-class design support
` Very low thermal resistance design for unrivalled reliability
NXP’s leading LDMOS technologies together with advanced package concepts enable best in class performing
power amplifiers. We offer industry’s highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and
High Frequency (HF) applications as well as covering ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS Line up
3.7.2.2 470-876 MHz (UHF) LDMOS line up
3.7.2.3 28-225 Mhz General purpose VDMOS
driver
driver
driver
driver
final
driver
final
final
final
final
driver
driver
final
driver
driver
final
final
final
final
final
Function
Function
Function
BLF871
BLF871S
BLF881
BLF881S
BLF645
BLF571
BLF573
BLF573S
BLF574
BLF578
BLF871
BLF871S
BLF878
BLF881S
BLF881
BLF888
BLF888AS
BLF888A
BLF177
BLF278
Type
Type
Type
SOT502A3
SOT540A
SOT262A1
SOT467C
SOT467B
SOT467C
SOT467C
SOT467C
SOT502B
SOT539A
SOT539A
SOT467C
SOT467B
SOT979A
SOT467C
SOT467C
SOT979A
SOT539B
SOT539B
Package
Package
Package
SOT121B
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
470 - 860
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1400
0 - 1400
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
108-225
28-108
MHz
MHz
MHz
f
f
f
range
range
range
250-300
P
1200
1000
P
P
100
100
140
140
100
100
300
300
500
100
100
300
120
120
250
250
110
255
150
110
115
W
24
24
33
33
20
W
24
24
75
30
30
W
L(AV)
L(AV)
L(AV)
50-80
>35
η
η
η
47
33
47
33
49
34
49
34
45
56
70
70
70
70
71
75
47
33
47
33
32
46
48
31
48
31
46
31
46
31
47
32
%
%
%
D
D
D
14-20
26.5
27.5
27.2
27.2
dB
dB
dB
G
G
G
21
22
21
22
21
21
21
21
18
18
24
26
21
22
21
22
21
21
21
21
21
21
19
19
19
19
19
19
20
p
p
p
NXP Semiconductors RF Manual 14
@V
@V
@V
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
40
50
50
50
50
50
50
50
50
50
50
50
50
32
32
42
42
V
V
V
DS
DS
DS
Mode of operation
Mode of operation
Mode of operation
CW class AB
CW class AB
PULSED RF
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
2-TONE
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
DVB-T
CW
CW
CW
CW
CW
CW
CW
th
edition
83

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