BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 51

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Quick reference data CATV 1 GHz power doublers and push pulls
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2
Noise (@f
Total current consumption (mA)
Frequency range (MHz)
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2
Noise (@f
Total current consumption (mA)
Frequency range (MHz)
MAX
MAX
nd
) (dB)
nd
) (dB)
order distortion (dB)
order distortion (dB)
(N + 1)
typ.
typ.
typ.
typ.
max.
typ.
range
typ.
typ.
typ.
typ.
max.
typ.
range
CGD1040Hi
CGY1041
40 - 1003
40 - 1003
RF switch
440
250
-69
-68
-62
-62
1.5
1.5
5.5
21
22
6
PAD
CGD1042H
CGY1043
40 - 1003
40 - 1003
CATV 1-GHz push-pulls
450
250
-69
-68
-64
-64
1.5
1.5
5.5
23
24
6
EQ
CGD1042Hi
CATV 1- GHz power doublers
CGY1049*
40 - 1003
40 - 1003
440
250
-69
-68
-62
-64
1.5
4.5
23
30
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26-dB power
gain with 60-dBmV output power and excellent ESD protection,
for the ultimate in high-quality, distortionless devices.
6
2
CGD1044H
CGY1032*
40 - 1003
40 - 1003
PAD
PAD
PAD
PAD
450
250
-69
-68
-62
-64
1.5
4.5
33
25
CGD104xHi
CGD104xHi
CGD104xHi
CGD104xHi
1
6
NXP Semiconductors RF Manual 14
CGD1044Hi
40 - 1003
440
-69
-68
1.5
25
6
H
H
H
H
L
L
L
L
CGD1046Hi*
40 - 1003
0.5 - 2.0
460
-68
-73
27
5
bra822
OUT
port 1
OUT
port 2
OUT
port 3
OUT
port 4
th
edition
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