BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 29

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.5.4 DECT front-end
Application diagram
Recommended products
^ = also available in ultra small leadless package SOD882T.
Function
Product highlight:
BAP64xx PIN diode for RF switch
Operating up to 3 GHz with high-voltage handling capabilities,
NXP’s PIN diodes are ideal for a wide range of wireless
communication application. Together with outstanding RF
performance, this component simplify design-in because of its
extremely low forward resistance, diode capacitance and series
inductance.
Significant board space saving by supplying a range of high
compact package options – including SOD523, SOD323 and
leadless SOD882T.
RF Switch
antenna
Product
RF diode
switch
filter
PIN Diode
LNA
PA
Package
various
various
various
various
various
various
CHIPSET
bra911
Type
BAP51^
BAP55^
BAP142^
BAP63^
BAP64^
BAP1321^
Features
`
`
`
`
DECT in-house base station
Application diagram
Recommended products
# = also for 5.8 GHz
Function
Function
antenna
Operate up to 3 GHz
High isolation, low distortion, low insertion loss
Low forward resistance (Rd) and diode capacitance (Cd)
Ultra-small package options
RF Switch
Mixer
Product
Product
RF bipolar
transistor
RF diode
SPDT
switch
MMIC
LNA
filter
NXP Semiconductors RF Manual 14
filter
PA
Linear mixer
Wideband
PIN Diode
transistor
transistor
SiGe:C
mixer
driver
buffer
VCO
Package
various
various
various
various
various
various
Package
SOT343
SOT343
SOT343
SOT343F
SOT363
VCO
filter
th
edition
Type
BAP51^
BAP55^
BAP142^
BAP63^
BAP64^
BAP1321^
Type
BFG410W
BFG425W
BFG480W
BFU725F/N1#
BGA2022
CHIPSET
bra910
31