BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 34

IC BASESTATION FINAL SOT502B

BLF6G10LS-135R,112

Manufacturer Part Number
BLF6G10LS-135R,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors

Specifications of BLF6G10LS-135R,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
21dB
Voltage - Rated
65V
Current Rating
32A
Current - Test
950mA
Voltage - Test
28V
Power - Output
26.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
32 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
26.5W(Typ)
Power Gain (typ)@vds
21@28VdB
Frequency (min)
869MHz
Frequency (max)
894MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13S
Drain Source Resistance (max)
100(Typ)@6.15Vmohm
Reverse Capacitance (typ)
2@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
28%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934061247112
BLF6G10LS-135R
BLF6G10LS-135R
1.6.5 E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
Recommended products
^ = also available in ultra small leadless package SOD882T.
36
Function
Function
Function
SPDT Switch
Product highlight:
BGA7127 MMIC medium power amplifier
The BGA7127 MMIC is a one-stage driver amplifier, offered in a
low-cost ultra small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and a superior performance
for various narrowband-tuned application circuits for frequencies up
to 2700 MHz.
Driver
LNA
NXP Semiconductors RF Manual 14
antenna
Product
Product
Product
RF transistor SiGe:C transistor SOT343F
RF bipolar
transistor
RF diode
MMIC
MMIC
wideband ampl.
wideband ampl.
SiGe:C MMIC
Gen. purpose
Bandswitch
Wideband
PIN diode
Low noise
transistor
Amplifier
SPDT
switch
diode
filter
filter
th
edition
MPA
LNA
Package
SOD523
SOD323
various
various
Package
SOT343R
SOT343R
SOT891
Package
SOT343
SOT363
SOT363
SOT363
driver
filter
Type
BA277
BA591
BAP51^
BAP1321^
Type
BFU725F /N1
BGA2001
BGA2003
BGU7003
Type
BFG425W
BGA2031/1
BGA2771
BGA2776
mixer
VCO
buffer
VCO
Medium power
Features
`
`
`
`
`
`
`
Function
Function
Function
Function
400 MHz to 2700 MHz frequency operating range
16 dB small signal gain at 2 GHz
27 dBm output power at 1 dB gain compression
Integrated active biasing
3.3 V / 5 V single supply operation
Simple quiescent current adjustment
1 μA shutdown mode
amplifier
Buffer
Mixer
VCO
E-METERING
CHIP SET
Product
Product
Product
Product
bra850
RF bipolar
RF bipolar
RF bipolar
transistor
transistor
transistor
Varicap
diodes
MMIC
MMIC
Gen. purpose
VCO varicap
Linear mixer
Wideband
Wideband
Wideband
wideband
transistor
transistor
transistor
diodes
ampl.
Package
SOT343
SOT343
SOT343
SOT363
Package
SOT23
SOT323
SOT323
SOT416
Package
SOT343
SOT89
SOT908
SOT908
Package
SOD523
SOD323
Type
BFG410W
BFG425W
BFG480W
BGA2022
Type
PBR951
PRF957
PRF947
PRF949
Type
BFG21W
BGA6289
BGA6489
BGA6589
BGA7124
BGA7127
Type
BB198
BB156

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