BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 17

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.3.2 CATV electrical (line extenders)
Application diagram
Recommended products
All available in SOT115 package.
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
Function
pre-amplifier
Function
Product highlight:
CGD1046Hi
CGD1046Hi* with a very high-output power level is primarily
designed for use in fiber deep-optical-node applications (N+1/2/3).
This 1 GHz hybrid amplifier solution offers an extended temperature
range, high power overstress capabilities in case of surges and high
ESD levels resulting in a low cost of ownership. It’s designed for
durability and offering superior ruggedness.
RF reverse
amplifier
RF
coax in
Product
Product
Push-Pulls
Reverse
hybrids
duplex
filter
Frequency
Frequency
5-75 MHz
5-120 MHz
5-200 MHz
1000 MHz
550 MHz
600 MHz
750 MHz
870 MHz
amplifier
RF pre-
18 - 19
22
24
28
29
32
29.2 - 30.8
24.5 - 25.5
23.5 - 24.5
Gain (dB)
33.5 - 35.5
33.5 - 35.5
26.2 - 27.8
21 - 22
33.5 - 35.2
33.5 - 34.5
18 - 19
21 - 22
18 - 19
21 - 22
33.5 - 34.5
34.5 - 36.5
Gain (dB)
RF reverse
amplifier
RF power
amplifier
Type
BGY588N
BGY588C
BGY587B
BGY687
BGE788C
BGE788
BGY785A
BGY787
BGY885A
BGY887
BGY888
CGY888C
BGY1085A
CGY1041*
CGY1043*
CGY1047
CGY1049*
CGY1032*
Type
BGY68
BGY66B
BGY67A
duplex
filter
Features
`
`
`
`
`
`
`
`
`
`
`
`
Function
RF power
High-output power
High power gain for power doublers
Extremely low noise
Dark Green products
GaAs HFET dies for high-end applications
Rugged construction
Superior levels of ESD protection
Integrated ringwave protection
Design optimized for digital channel loading
Temperature compensated gain response
Optimized heat management
Excellent temperature resistance
amplifier
Product
coax out
doublers
bra505
Power
NXP Semiconductors RF Manual 14
Frequency
1000 MHz
550 MHz
750 MHz
870 MHz
Gain (dB)
18-19
19.5 - 20.5
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18 - 19
18.2 - 18.8
19.7 - 20.3
20.5 - 22.5
23 - 25
21
23
23
25
25
26
th
edition
Type
BGD502
BGD704
BGD712
BGD712C
BGD714
BGD802
BGD812
BGD814
CGD942C
CGD944C
CGD1040Hi
CGD1042H
CGD1042Hi
CGD1044H
CGD1044Hi
CGD1046Hi*
19