BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 50

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

2.8
NXP high-gain power doublers CGD104xHi and push-pulls CGY104x
Designed for 1-GHz “sustainable networks,” these high-performance GaAs devices enable
extended bandwidth and higher data rates. They deliver increased network capacity and make way
for high-end services like HDTV, VoIP, and digital simulcasting.
Key features
` Excellent linearity, stability, and reliability
` High power gain for power doublers
` Extremely low noise
` Dark Green products
` GaAs HFET dies for high-end applications
` Rugged construction
` Superior levels of ESD protection
` Integrated ringwave protection
` Design optimized for digital channel loading
` Temperature compensated gain response
` Optimized heat management
` Excellent temperature resistance
Key benefits
` Simple upgrade to 1-GHz capable networks
` Low total cost of ownership
` High power-stress capability
` Highly automated assembly
Key applications
` Hybrid Fiber Coax (HFC) applications
` Line extenders
` Trunk amplifiers
` Fiber deep-optical-node (N+0/1/2)
` Bridgers
52
NXP Semiconductors RF Manual 14
Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks
th
edition
New CATV GaAs platform lay-out
The NXP power doublers CGD104xH and CGD104xHi are ideal
for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
along with lower current.
The new NXP CGY1047x push-pull family is the first line-up on
the market combining very low noise, best-in-class distortion
parameters, and low “carbon footprint” capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO
All of NXP’s 1-GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
The GaAs die is inserted in a HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the module’s
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
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