BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 23

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.4.4 Satellite outdoor unit, low noise block (LNB) for multiple users
Application diagram
Recommended products
^ = also available in ultra small leadless package SOD882T.
Function
Function
Function
Product highlight:
BGA28xx-family, IF gain blocks
The BGA28xx IF gain blocks are Silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
Oscillator
IF switch
amplifier
1
st
stage
IF
horizontal
antenna
antenna
vertical
Product
Product
Product
RF transistor
RF bipolar
RF bipolar
stage
stage
transistor
transistor
RF diode
LNA
LNA
1
1
MMIC
st
st
BIAS IC
BIAS IC
stage
stage
LNA
LNA
2
2
nd
nd
IF gain block
Wideband
Wideband
PIN diode
transistor
transistor
transistor
amplifier
purpose
General
SiGe:C
stage
stage
LNA
LNA
3
3
rd
rd
mixer
high
low
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343F
Package
SOT343
SOT343F
SOT343F
Package
SOT363
SOT363
SOT363
SOT363
SOT363
Package
various
various
various
various
various
mixer
mixer
mixer
oscillator
oscillator
IF amplifier
IF amplifier
IF amplifier
IF amplifier
Type
BFG424W
BFG424F
BFU725F/N1
Type
BGA2711
BGA2712
BGA2748
BGA2714
BGA2717
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BFG424W
BFG424F
Type
BAP64^
BAP51^
BAP1321^
BAP50^
BAP63^
H high
V high
H low
V low
SWITCH
(4 x 2)
# = When using one of our IF gain blocks (BGA28xx) as output stage IF amplifier,
you do not need an output inductor anymore.
IF
Function
Features
`
`
`
`
Function
Function
3
rd
Internally matched to 50 Ω
Reverse isolation > 30 dB up to 2 GHz
Good linearity with low second order and third order products
Unconditionally stable (K > 1)
amplifier
Output
stage IF
stage LNA
Mixer
amplifier
amplifier
IF
IF
Product
Product
Product
RF transistor
RF transistor
RF bipolar
transistor
MMIC
IF out 1
IF out 2
brb022
NXP Semiconductors RF Manual 14
IF gain block#
Wideband
transistor
transistor
transistor
amplifier
purpose
General
SiGe:C
SiGe:C
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
Package
SOT343F
Package
SOT343F
th
edition
Type
BGA2709
BGA2776
BGM1014
BGM1012
BGA2716
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BFG325
Type
BFU725F/N1
Type
BFU725F/N1
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