BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 53

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

Discrete Doherty amplifiers
Next to the integrated versions, NXP also offers product
demonstrators for very efficient, high power, discrete 2- and
3- way Doherty amplifiers. The 2 way designs based on the
BLF7G22LS-130 device deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
Our flagship 3-way Doherty demonstrator even achieves 48%
efficiency at 48 dBm (63 W) average output power and 15.0 dB
gain with a 2 carrier W-CDMA signal. The current design covers
the W-CDMA standard for band 1 operation and is tailored
towards high yield, minimum tuning, volume manufacturing.
Featured Doherty designs
Freq band
(MHz)
728-756
790-821
869-894
925-960
1805-1880
1930-1990
2110-2170
2300-2400
2500-2700
3400-3600
PPEAK
(dBm)
58.9
58.2
52.5
59.1
49.5
58
58
58
58
51
POUT-AVG
(dBm)
50.5
44.5
50
50
50
50
50
50
42
43
VDS
(V)
32
32
32
32
28
32
32
28
28
28
Gain
(dB)
15.5
14.5
11.5
19
19
19
22
16
15
14
Drain Eff.
Key features & benefits
` Most efficient Doherty amplifier designs available to date
` Production proven, very consistent designs
` NXP’s LDMOS provides unsurpassed ruggedness
` Currently available for the following frequency bands:
All our product demonstrators are supported by
comprehensive support documentation and hardware.
Please see chapter 3.7.1.7 for a complete list of available
designs.
(%)
40
47
46
44
42
37
40
43
38
32
- 728 - 821 MHz
- 869 - 960 MHz
- 1805 - 1880 MHz (DCS)
- 1930 - 1990 MHz (PCS)
- 1880 - 2025 MHz (TD-SCDMA)
- 2110 - 2170 MHz (UMTS / LTE)
- 2300 - 2400 MHz (WiBRO / LTE)
- 2500 - 2700 MHz (WiMAX / LTE)
- 3300 - 3800 MHz (WiMAX)
SYM / MMPP
SYM / MPPM
Type
SYM
SYM
SYM
SYM
SYM
SYM
SYM
SYM
Main transistor
BLF6G10-260PM
BLF6G10LS-200RN
BLF6G10-200RN
BLF6G10-260PRN
BLF7G20LS-250P
BLF6G20-230PRN
BLF6G22-180PN
1/2 BLF7G27-75P
1/2 BLF6G27-150P
BLF6G38-50
NXP Semiconductors RF Manual 14
Peak transistor
BLF6G10-260PM
BLF6G10LS-200RN
BLF6G10-200RN
BLF6G10-260PRN
BLF7G20LS-250P
BLF6G20-230PRN
BLF6G22-180PN
1/2 BLF7G27-75P
1/2 BLF7G27-150P
BLF6G38-50
th
edition
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