BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 8

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

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10
Function
Function
Product highlight:
high power transistor BLF7G20L(S)-300P
NXP's LDMOS Gen6 and Gen7 enable the world's most efficient base
station designs by combining very high intrinsic (Si technology) and
extrinsic (amplifier design) efficiencies. Gen7 is specifically designed
for Doherty amplifiers.
amplifier - Doherty
amplifier - single
(high power
(high power
transistors)
designs)
HPA
HPA
NXP Semiconductors RF Manual 14
Sub function
Freq band
2300-2400
2500-2700
3400-3600
integrated Doherty driver
1805-1880
1930-1990
2110-2170
728-768
869-894
925-960
(MHz)
MMIC driver
MMIC driver
driver
driver
driver
final
final
final
final
final
final
final
final
final
final
PPEAK
(dBm)
58.9
58.2
49.5
52.5
58
58
58
58
51
th
edition
POUT-AVG
(dBm)
44.5
50
50
50
50
50
50
42
43
1800 - 2000
2100 - 2200
2000 - 2200
2300 - 2400
2500 - 2700
3400 - 3600
1805 - 1880
1805 - 1880
1805 - 1880
2010 - 2025
2110 - 2170
2110 - 2170
700 - 1000
700 - 1000
688 - 1000
10 - 2200
MHz
f
range
VDS
(V)
32
32
32
28
32
32
28
28
28
Type
BLF6G21-10G
BLM6G10-30
BLF6G10-160RN
BLF6G10-200RN
BLF6G20-230PRN
BLF7G20L(S)-200
BLF7G20L(S)-250P
BLF7G20L(S)-300P
BLM6G22-30
BLD6G21L-50
BLD6G22L-50
BLF7G22L-130
BLF6G22-180PN
BLF6G22-180RN
BLF7G22L(S)-200
BLF7G24L(S)-100(G)
BLF6G27-10
BLF6G27-135
BLF7G27L-200P
BLF6G38-10
BLF6G38-100
Gain
(dB)
15.5
14.5
11.5
22
19
19
16
15
14
Features
`
`
`
`
`
unrivalled ruggedness
very consistent device performance
highest Doherty amplifier efficiencies to date
300 W peak power; 35 W average power in push pull package
low thermal resistance design for very reliable operation
Drain Eff.
(%)
47
46
44
42
37
40
43
38
32
P
18.5
0.6
W
32
40
65
50
70
85
30
50
40
55
24
20
20
L(AV)
2
2
8
8
2
2
SYM / MMPP
SYM / MPPM
Type
SYM
SYM
SYM
SYM
SYM
SYM
SYM
28.5
27.5
22.5
21.5
11.5
η
27
32
30
30
30
42
38
32
25
20
25
20
%
15
17
18
9
D
BLF6G10LS-200RN
BLF6G10-200RN
1/2 BLF6G10-260PRN
BLF7G20LS-250P
BLF6G20-230PRN
BLF6G22-180PN
1/2 BLF7G27-75P
1/2 BLF6G27-150P
BLF6G38-50
Main transistor
18.5
22.5
29.5
13.5
13.3
18.5
16.5
17.5
17.5
dB
G
29
20
28
28
17
17
17
16
19
16
14
13
p
Mode of operation
WCDMA. TD-SCDMA. GSM. EDGE
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
TD-SCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WCDMA
WiMAX
WiMAX
WiMAX
WiMAX
WiMAX
BLF6G10LS-200RN
BLF6G10-200RN
1/2 BLF6G10-260PRN
BLF7G20LS-250P
BLF6G20-230PRN
BLF6G22-180PN
1/2 BLF7G27-75P
1/2 BLF7G27-150P
BLF6G38-50
Peak transistor