BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 36

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

1.6.7 Medical Imaging
Application diagram
Recommended products
38
Function
Product highlight:
NXP’s line of 50 V High voltage LDMOS devices enable highest
power output and feature unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable very compact amplifier design.
driver
driver
driver
final
final
final
final
NXP Semiconductors RF Manual 14
Type
BLF871(S)
BLF881
BLF571
BLF573S
BLF574
BLF578
BLF645
Gradient coils
Magnet
RF coils
ELECTRONICS
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
(MHz)
f
RF
range
th
edition
1200
100
300
400
100
120
20
P
W
L
RF amplifier
X GRADIENT
Y GRADIENT
Z GRADIENT
AMPLIFIER
AMPLIFIER
AMPLIFIER
ADC
27.5
27.2
26.5
dB
G
21
21
24
18
p
GENERATOR
WAVEFORM
COMPUTER
DISPLAY
IMAGE
Features
`
`
`
`
Best broadband efficiency
Highest power (density) devices
Unrivalled ruggedness
Very consistent device performance
brb434