BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 57

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

We were the first semiconductor company to supply S-band
transistors (2700 - 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we currently develop new high
power and high-bandwidth technologies based on gallium
nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process QUBiC
that is available in several variants with f
specialized to address specific small signal RF applications.
The product portfolio encompasses:
Coming from a component background, NXP now also focuses
on architectural breakthroughs by highly integrated products
for microwave and millimeter wave. One example is a family of
LO Generators from 7G Hz to 15 GHz with integrated
Phase-Locked Loop and Voltage Controlled Oscillator.
Another example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W. Both products are highlighted in the
following:
RF small signal product highlight:
LO generators TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators are low-power, low-spurious solutions that simplify
design-in and lower the total cost of ownership.
2.12
NXP, your partner in High Performance microwave applications
NXP has a 50+ years history in semiconductor technology and component design. For more
than 3 decades we are leading in providing high performance RF technologies for microwave
applications. The company has built a strong position in the field of RF small signal and power
transistors for microwave amplifiers with a solid and growing, and best-in-class Si devices and
processing technologies.
- Low noise amplifiers (LNA)
- Variable gain amplifiers (VGA)
- Mixers,
- Local oscillators (LO)
- LO Generators
Microwave / Radar
T
up to 200 GHz, each
Features
` Lowest noise LO generators for 7 to 15 GHz range
` Maximum power consumption for all types, typical 330 mW
` Phase-noise compliant with IESS-308 (Intelsat)
` Proven QUBiC4X SiGe:C technology (120 GHz f
` External loop filter
` Differential input and output
` Lock-detect output
` Internally stabilized voltage reference for loop filter
RF Power product highlight !
The BLS6G2933P-200 is the first LDMOS based, industry
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
NXP Semiconductors RF Manual 14
th
T
edition
process)
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