BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet - Page 46

• Manufacturer Part Number: BLF6G10LS-135R,112
• Description: IC BASESTATION FINAL SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135R,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 32 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 26.5W(Typ)
• Power Gain (typ)@vds: 21@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13S
• Drain Source Resistance (max): 100(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 28%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934061247112; BLF6G10LS-135R; BLF6G10LS-135R

2.7
Connecting people, protecting your network
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP CATV C-family
offers you a total solution for cable TV networks. It is both flexible enough for connecting rural
communities as part of China’s ‘Connecting every village’ program and powerful enough for
upgrading major cities from analog to high-end digital services. All C-type devices are compliant
with the Chinese State Administration for Radio, Film and Television (SARFT) standard, and cover
most HFC applications in the 550 - 870 MHz range.
Products
` BGY588C, BGE788C, CGY888C and BGY835C push-pull
` BGD712C, CGD944C and CGD942C power doublers
` BGO807C and BGO807CE optical receiver
Features
` Excellent linearity, stability and reliability
` High power gain
` Extremely low noise
` Silicon Nitride passivity
` GaAs HFET dies for high end devices
Benefits
` Compliant with Chinese SARFT HFC networks standard
` Transparent cap allows confirmation of product authenticity
` Rugged construction
48
amplifiers
NXP Semiconductors RF Manual 14
NXP CATV C-family for the Chinese SARFT standard
th
edition
Further extending our high quality CATV portfolio, this
new family lets you address an even wider range of HFC
applications. Dedicated solutions for the implementation
of CATV systems in China, our C-type devices deliver the
performance you need for modern TV infrastructures.
The BGY588C, BGE788C and BGD712C devices cover the
frequency range from 550 MHz to 750 MHz. Extending the
C-family portfolio into the high-end segment, the CGD944C,
CGD942C, CGY888C and BGO807C operate between 40 MHz
and 870 MHz and have been specifically tested under Chinese
raster conditions. Manufactured using our GaAs HFET die
process, the CGD942C, and CGD944C are high-gain, high-
performance 870 MHz power doublers. They are capable of
satisfying the demanding requirements of top-end applications
including high-power optical nodes.
Our GaAs HFET MMIC dies are providing ‘by design’ the
best ESD protection levels with no needs for external TVS
components normally used with GaAs pHEMT devices.
All CATV C-type devices feature a see-through cap that makes
it easy to distinguish them from counterfeit products.