MC68HC908QY2 MOTOROLA [Motorola, Inc], MC68HC908QY2 Datasheet - Page 47

• Manufacturer Part Number: MC68HC908QY2
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

4.4 FLASH Control Register
MOTOROLA
MC68HC908QY4•MC68HC908QT4•MC68HC908QY2•MC68HC908QT2•MC68HC908QY1•MC68HC908QT1
Address:
The FLASH control register (FLCR) controls FLASH program and erase
operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Reset:
Read:
Write:
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM =1 or ERASE =1 and the proper sequence for program
or erase is followed.
This read/write bit configures the memory for mass erase operation.
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Mass Erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
$FE08
Bit 7
0
0
Figure 4-1. FLASH Control Register (FLCR)
FLASH Memory (FLASH)
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
FLASH Memory (FLASH)
2
0
FLASH Control Register
ERASE
1
0
PGM
Bit 0
0
47