MC68HC908QY2 MOTOROLA [Motorola, Inc], MC68HC908QY2 Datasheet - Page 50

• Manufacturer Part Number: MC68HC908QY2
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

FLASH Memory (FLASH)
50
MC68HC908QY4•MC68HC908QT4•MC68HC908QY2•MC68HC908QT2•MC68HC908QY1•MC68HC908QT1
NOTE:
NOTE:
The COP register at location $FFFF should not be written between steps
5-12, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is
written while HVEN is set.
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
1. The time between each FLASH address change, or the time between the last FLASH address
10. Clear the PGM bit
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
programmed to clearing PGM bit, must not exceed the maximum programming time, t
maximum.
1. Set the PGM bit. This configures the memory for program
2. Read from the FLASH block protect register.
3. Write any data to any FLASH location within the address range
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address being programmed
8. Wait for time, t
9. Repeat step 7 and 8 until all desired bytes within the row are
operation and enables the latching of address and data for
programming.
desired.
programmed.
mode again.
Characteristics.
FLASH Memory (FLASH)
rcv
(typical 1 s), the memory can be accessed in read
PROG
nvh
nvs
pgs
(1)
(minimum 5 s).
(minimum 10 s).
(minimum 5 s).
.
(minimum 30 s).
PROG
maximum, see
(1)
MOTOROLA
.
18.14
PROG