MC68HC908QY2 MOTOROLA [Motorola, Inc], MC68HC908QY2 Datasheet - Page 49

• Manufacturer Part Number: MC68HC908QY2
• Description: Microcontrollers
• Manufacturer: MOTOROLA [Motorola, Inc]

4.6 FLASH Mass Erase Operation
4.7 FLASH Program Operation
MOTOROLA
MC68HC908QY4•MC68HC908QT4•MC68HC908QY2•MC68HC908QT2•MC68HC908QY1•MC68HC908QT1
NOTE:
NOTE:
NOTE:
Use the following procedure to erase the entire FLASH memory to read
as logic 1:
Mass erase is disabled whenever any block is protected (FLBPR does
not equal $FF).
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from addresses $XX00,
$XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, or $XXE0. Use the
following step-by-step procedure to program a row of FLASH memory
Figure 4-2
Only bytes which are currently $FF may be programmed.
1. When in monitor mode, with security sequence failed (see
10. After time, t
block protect register instead of any FLASH address.
1. Set both the ERASE bit and the MASS bit in the FLASH control
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
register.
memory address range.
mode again.
shows a flowchart of the programming algorithm.
FLASH Memory (FLASH)
rcv
(typical 1 s), the memory can be accessed in read
nvs
Erase
nvh1
(minimum 10 s).
(minimum 100 s).
(minimum 4 ms).
(1)
9.5
FLASH Mass Erase Operation
within the FLASH
Security), write to the FLASH
FLASH Memory (FLASH)
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