DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 10

• Manufacturer Part Number: DF3048X16V
• Description: MCU 5V 128K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048X16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Rev. 7.00 Sep 21, 2005 page viii of xxiv
Item
19.5.6 Erasing
Flowchart and
Sample Program
Flowchart for
Erasing One Block
Figure 19.10
Erasing Flowchart
Page
610
Revision (See Manual for Details)
Figure amended
Address + 1
No
address
Wait initial value setting x = 6.25 ms
Dummy write to verify address
(flash memory latches address)
(clear bit of erased block to 0)
Clear erase block register
Enable watchdog timer
Set top address in block
Select erase-verify mode
Disable watchdog timer
Verify (read memory)
(E bit = 1 in FLMCR)
End of block erase
Select erase mode
as verify address
OK
Clear
Wait (t
Wait (t
Last address?
Clear EV bit
Wait (x) ms
(EV bit = 1)
Clear E bit
V
VS1
VS2
PP
Yes
E
) µs
) µs
bit
*5
*5
*4
*2
*3
No good
Erasing ends
Clear erase block register
(clear bit of block to be
Clear
erased to 0)
Clear EV bit
Erase error
n
V
PP
N?
Yes
E
bit
5. t
6. The erase time x is successively
z:
t
N:
incremented by the initial set
value
initial value of 6.25 ms or less
should be set, and the time for
one erasure should be 50 ms or
less.
VS1
VS2
: 4 s
: 2 µs
No
Erase-verify ends
5 to 10 s
602
2n
Double the erase time
–1
(n = 1, 2, 3, 4). An
(x
n + 1
n
2
5?
No
n
x)
*6
Yes