DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 631

• Manufacturer Part Number: DF3048X16V
• Description: MCU 5V 128K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048X16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

19.5.1
To write data into the flash memory, follow the programming algorithm shown in figure 19.9.
This programming algorithm can write data without subjecting the device to voltage stress or
impairing the reliability of programmed data.
To program data, first set the V
programmed by erase block registers 1 and 2 (EBR1, EBR2), and write the data to the address to
be programmed, as in writing to RAM. The flash memory latches the address and data in an
address latch and data latch. Next set the P bit in FLMCR, selecting program mode. The
programming duration is the time during which the P bit is set. A software timer should be used to
provide an initial programming duration of 15.8 µs or less. Programming for too long a time, due
to program runaway for example, can cause device damage. Before selecting program mode, set
up the watchdog timer so as to prevent overprogramming.
19.5.2
In program-verify mode, after data has been programmed in program mode, the data is read to
check that it has been programmed correctly.
After the programming time has elapsed, exit programming mode (clear the P bit to 0) and select
program-verify mode (set the PV bit to 1). In program-verify mode, a program-verify voltage is
applied to the memory cells at the latched address. If the flash memory is read in this state, the
data at the latched address will be read. After selecting program-verify mode, wait 4 µs before
reading, then compare the programmed data with the verify data. If they agree, exit program-
verify mode and program the next address. If they do not agree, select program mode again and
repeat the same program and program-verify sequence. Do not repeat the program and program-
verify sequence more than 6 times for the same bit. (When a bit is programmed repeatedly, set a
loop counter so that the total programming time will not exceed 1 ms.)
Program Mode
Program-Verify Mode
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
PP
E bit in FLMCR, wait 5 to 10 µs, then designate the blocks to be
Rev. 7.00 Sep 21, 2005 page 605 of 878
REJ09B0259-0700
PP
= 12 V))