DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 652
![MCU 5V 128K,PB-FREE 100-TQFP](/photos/28/61/286123/100-tqfp__100-vqfp_sml.jpg)
DF3048X16V
Manufacturer Part Number
DF3048X16V
Description
MCU 5V 128K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Specifications of DF3048X16V
Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF3048X16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
Hardware Protection: Suspends or disables the programming and erasing of flash memory, and
resets the flash memory control register (FLMCR) and erase block registers (EBR1 and EBR2).
The error-protect function permits the P and E bits to be set, but prevents transitions to program
mode and erase mode. Details of hardware protection are as follows.
Protection
Programing
voltage (V
protect
Reset and
standby
protect
Error protect
Notes: 1. Program-verify, erase-verify, and prewrite-verify modes.
Error Protect: This protection mode is entered if one of the error conditions that set the FLER bit
in RAMCR is detected while flash memory is being programmed or erased (while the P bit or E
bit is set in FLMCR). These conditions can occur if microcontroller operations do not follow the
programming or erasing algorithm. Error protect is a flash-memory state. It does not affect other
microcontroller operations.
In this state the settings of the flash memory control register (FLMCR) and erase block registers
(EBR1 and EBR2) are preserved*, but program mode or erase mode is terminated as soon as the
error is detected. While the FLER bit is set, it is not possible to enter program mode or erase
Rev. 7.00 Sep 21, 2005 page 626 of 878
REJ09B0259-0700
2. All blocks are erase-disabled. It is not possible to specify individual blocks.
3. For details, see section 19.8, Flash Memory Programming and Erasing Precautions
PP
(Dual-Power Supply).
)
Description
When V
and EBR2 are initialized, disabling
programming and erasing. To obtain this
protection, V
When a reset occurs (including a
watchdog timer reset) or standby mode is
entered, FLMCR, EBR1, and EBR2 are
initialized, disabling programming and
erasing. Note that RES input does not
ensure a reset unless the RES pin is held
low for at least 20 ms at power-up (to
enable the oscillator to settle), or at least
10 system clock cycles ( ) during
operation.
If an operational error is detected during
programming or erasing of flash memory
(FLER = 1), the FLMCR, EBR1, and EBR2
settings are preserved, but programming
or erasing is aborted immediately. This
type of protection can be cleared only by a
reset or hardware standby.
PP
is not applied, FLMCR, EBR1,
PP
should not exceed V
CC
. *
3
Program
Disabled
Disabled
Disabled
PP
= 12 V))
Erase
Disabled *
Disabled *
Disabled *
Function
2
2
2
Verify *
Disabled
Disabled
Enabled
1
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