DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 676

• Manufacturer Part Number: DF3048X16V
• Description: MCU 5V 128K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048X16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
reached the programming voltage range of 12.0 V ±0.6 V. Do not actually program or erase the
flash memory until Vpp has reached the programming voltage range.
The programming voltage range for programming and erasing flash memory is 12.0 V ±0.6 V
(11.4 V to 12.6 V). Programming and erasing cannot be performed correctly outside this range.
When not programming or erasing the flash memory, ensure that the Vpp voltage does not exceed
the Vcc voltage. This will prevent unintentional programming and erasing.
(12) After the Vpp enable bit (VppE) is cleared, the flash memory read setup time (t
must elapse before the flash memory is read.
When switching from boot mode or user program mode to normal mode (Vpp
V), this setup time is required as the period from VppE bit clearance until the flash memory is
read.
When switching from boot mode to another mode, a mode programming setup time (t
required with respect to the RES release timing.
Note: * The flash memory read setup time stipulates the interval before flash memory is read after
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REJ09B0259-0700
the VppE bit is cleared (figure 19.24). Also, when using an external clock (EXTAL input),
after powering on and when returning from standby mode, the flash memory read setup
time must elapse before the flash memory is read.
PP
= 12 V))
12 V, MD2
MDS
) is
FRS
)*
12