DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 209

MCU 5V 128K,PB-FREE 100-TQFP

DF3048X16V

Manufacturer Part Number
DF3048X16V
Description
MCU 5V 128K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3048X16V

Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3048X16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Example 4: Connection to Multiple 4-Mbit DRAM Chips (16-Mbyte Mode): Figure 7.13
shows an example of interconnections to two 2CAS 4-Mbit DRAM chips, and the corresponding
address map. Up to four DRAM chips can be connected to area 3 by decoding upper address bits
A
Figure 7.14 shows a setup procedure to be followed by a program for this example. The DRAM in
this example has 9-bit row addresses and 9-bit column addresses. Both chips must be refreshed
simultaneously, so the RFSH pin must be used.
19
Figure 7.13 Interconnections and Address Map for Multiple 2CAS
and A
20
.
H8/3048 Group
H'600000
H'67FFFF
H'680000
H'6FFFFF
H'700000
H'7FFFFF
D
A to A
15
9
RFSH
HWR
to D
LWR
CS
A
RD
19
1
3
0
DRAM area
DRAM area
Not used
No. 1
No. 2
a. Interconnections (example)
b. Address map
(Example)
Area 3 (16-Mbyte mode)
Rev. 7.00 Sep 21, 2005 page 183 of 878
2
row address, 9-bit column
address, and
CAS
A to A
RAS
UCAS
LCAS
WE
OE
I/O
A to A
RAS
UCAS
LCAS
WE
OE
I/O
8
8
15
15
CAS 4-Mbit DRAM Chips
CAS
CAS
4-Mbit DRAM with 9-bit
Section 7 Refresh Controller
to I/O
to I/O
0
0
0
0
16-bit organization
REJ09B0259-0700
No. 1
No. 2

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