DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 619

• Manufacturer Part Number: DF3048X16V
• Description: MCU 5V 128K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048X16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

19.3.3
Erase block register 2 (EBR2) is an eight-bit register that designates small flash-memory blocks
for programming and erasure. EBR2 is initialized to H'00 by a reset, in the standby modes, when
12 V is applied to V
EBR2 is set to 1, the corresponding block is selected and can be programmed and erased. Figure
19.2 shows a block map.
Note: * The initial value is H'00 in modes 5, 6, and 7 (on-chip flash memory enabled). In modes 1,
Bits 7 to 0—Small Block 7 to 0 (SB7 to SB0): These bits select small blocks (SB7 to SB0) to be
programmed and erased.
Bit
Initial value*
Read/Write
Bits 7 to 0:
SB7 to SB0
0
1
2, 3, and 4 (on-chip flash memory disabled), this register cannot be modified and is always
read as H'FF.
Erase Block Register 2
R/W*
SB7
7
0
Description
Block SB7 to SB0 is not selected
Block SB7 to SB0 is selected
PP
while the V
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
R/W*
SB6
6
0
PP
E bit is 0, and when 12 V is not applied to V
R/W*
SB5
5
0
R/W*
SB4
4
0
Rev. 7.00 Sep 21, 2005 page 593 of 878
R/W*
SB3
3
0
R/W*
SB2
2
0
REJ09B0259-0700
R/W*
PP
SB1
. When a bit in
1
0
(Initial value)
PP
= 12 V))
R/W*
SB0
0
0