DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 643

MCU 5V 128K,PB-FREE 100-TQFP

DF3048X16V

Manufacturer Part Number
DF3048X16V
Description
MCU 5V 128K,PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3048X16V

Core Processor
H8/300H
Core Size
16-Bit
Speed
16MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3048X16V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Sample Program for Erasing Multiple Blocks: This program uses the following registers.
R0, R6: Specifies blocks to be erased (set as explained below)
R1H:
R1L:
ER2:
ER3:
ER4:
ER5:
E0, E1: Timing loop counter
E6:
Arbitrary blocks can be erased by setting bits in R6.
A bit map of R6 and an example setting for erasing specific blocks are shown next.
Bit
R6
Example: to erase blocks LB2, SB7, and SB0
Bit
R6
Setting
R6 is set as follows:
The values of #a, #c, #d, #e, #f, #g, and #h in the program depend on the clock frequency. They
can be calculated as indicated in tables 19.9 and 19.10.
For #RAMSTR in the program, substitute the starting destination address in RAM, to be used
when this program is moved from flash memory into RAM.
MOV.W
MOV.W
LB7 LB6
LB7 LB6
Prewrite-verify fail counter
Used to test bits 0 to 15 of R0
Specifies address where address used in prewrite and erase-verify is stored
Stores address used in prewrite and erase-verify
Stores address used in prewrite and erase-verify
Sets appropriate registers
Erase-verify fail counter
15
15
0
#0481,
R6,
14
14
0
LB5
LB5
Corresponds to EBR1
Corresponds to EBR1
13
13
0
R6
@EBR1
LB4 LB3 LB2
LB4 LB3 LB2
12
12
0
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
11
11
0
10
10
1
LB1
LB1
9
9
0
LB0 SB7 SB6 SB5 SB4 SB3 SB2 SB1 SB0
LB0 SB7 SB6 SB5 SB4 SB3 SB2 SB1 SB0
8
8
0
7
7
1
Rev. 7.00 Sep 21, 2005 page 617 of 878
6
6
0
Corresponds to EBR2
Corresponds to EBR2
5
5
0
4
4
0
3
3
0
REJ09B0259-0700
2
2
0
PP
1
1
0
= 12 V))
0
0
1

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