MC68HC912B32VFU8 Freescale Semiconductor, MC68HC912B32VFU8 Datasheet - Page 93

• Manufacturer Part Number: MC68HC912B32VFU8
• Manufacturer: Freescale Semiconductor

Specifications of MC68HC912B32VFU8

• Cpu Family: HC12
• Device Core Size: 16b
• Frequency (max): 8MHz
• Interface Type: SCI/SPI
• Program Memory Type: EPROM
• Program Memory Size: 32KB
• Total Internal Ram Size: 1KB
• # I/os (max): 63
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• On-chip Adc: 8-chx10-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 105C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 80
• Package Type: PQFP
• Lead Free Status / Rohs Status: Not Compliant

Chapter 7
EEPROM
7.1 Introduction
The MCU is electrically erasable, programmable read-only memory (EEPROM) serves as a 768-byte
non-volatile memory which can be used for frequently accessed static data or as fast access program
code.
The MCU’s EEPROM is arranged in a 16-bit configuration. The EEPROM array may be read as either
bytes, aligned words, or misaligned words. Access time is one bus cycle for byte and aligned word access
and two bus cycles for misaligned word operations.
Programming is by byte or aligned word. Attempts to program or erase misaligned words will fail. Only the
lower byte will be latched and programmed or erased. Programming and erasing of the user EEPROM
can be done in all operating modes.
Each EEPROM byte or aligned word must be erased before programming. The EEPROM module
supports byte, aligned word, row (32 bytes), or bulk erase, all using the internal charge pump. Bulk
erasure of odd and even rows is also possible in test modes; the erased state is $FF. The EEPROM
module has hardware interlocks which protect stored data from corruption by accidentally enabling the
program/erase voltage. Programming voltage is derived from the internal V
supply with an internal
DD
charge pump. The EEPROM has a minimum program/erase life of 10,000 cycles over the complete
operating temperature range.
7.2 EEPROM Programmer’s Model
The EEPROM module consists of two separately addressable sections. The first is a 4-byte memory
mapped control register block used for control, testing, and configuration of the EEPROM array. The
second section is the EEPROM array itself.
At reset, the 4-byte register section starts at address $00F0 and the EEPROM array is located from
addresses $0D00 to $0FFF (see
Figure
7-1). For information on remapping the register block and
EEPROM address space, refer to
Chapter 5 Operating Modes and Resource
Mapping.
Read access to the memory array section can be enabled or disabled by the EEON control bit in the
EEPROM initialization register (INITEE). This feature allows the access of memory mapped resources
that have lower priority than the EEPROM memory array. EEPROM control registers can be accessed
and EEPROM locations may be programmed or erased regardless of the state of EEON.
Using the normal EEPROG control, it is possible to continue program/erase operations during wait. For
lowest power consumption during wait, stop program/erase by turning off EEPGM.
If the stop mode is entered during programming or erasing, program/erase voltage will be turned off
automatically and the resistor-capacitor (RC) clock (if enabled) is stopped. However, the EEPGM control
bit will remain set. When stop mode is terminated, the program/erase voltage will be turned back on
automatically if EEPGM is set.
M68HC12B Family Data Sheet, Rev. 9.1
Freescale Semiconductor
93