MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 14

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
DQ[15:0]
LB#/UB#
Non-default BCR settings for refresh collision during variable-latency READ operation: Latency code two (three clocks);
WAIT active LOW; WAIT asserted during delay.
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Figure 11: Refresh Collision During Variable-Latency READ Operation
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Additional WAIT states inserted to allow refresh completion.
High-Z
ADDRESS
VALID
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[0]
D[1]
D[2]
UNDEFINED
©2004 Micron Technology, Inc. All rights reserved.
8 MEG x 16
D[3]
DON’T CARE