MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 39

IC PSRAM 128MBIT 70NS 54VFBGA

MT45W8MW16BGX-708 WT TR

Manufacturer Part Number
MT45W8MW16BGX-708 WT TR
Description
IC PSRAM 128MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W8MW16BGX-708 WT TR

Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
128M (8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1010-2
Table 22: Asynchronous READ Timing Parameters—Page Mode Operation
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
t
AA
APA
BA
BHZ
BLZ
CEM
CEW
CO
MIN
10
1
-701/708
MAX
DQ[15:0]
LB#/UB#
7.5
70
20
70
70
A[22:4]
8
4
A[3:0]
ADV#
WAIT
WE#
OE#
CE#
MIN
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
10
IH
IH
IH
IH
IH
IH
IH
OH
IH
IL
IL
IL
IL
IL
IL
IL
OL
IL
1
-856
Figure 32: Page Mode READ
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
High-Z
MAX
7.5
85
25
85
85
8
4
High-Z
t
CEW
VALID ADDRESS
t LZ
t BLZ
UNITS
t CO
t AA
t BA
t OLZ
ns
ns
ns
ns
ns
µs
ns
ns
t OE
VALID ADDRESS
39
OUTPUT
VALID
t APA
t RC
SYMBOL
t
t
t
t
t
t
t
t
t CEM
ADDRESS
HZ
LZ
OE
OH
OHZ
OLZ
PC
RC
VALID
t OH
t PC
OUTPUT
VALID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ADDRESS
VALID
DON’T CARE
OUTPUT
VALID
ADDRESS
VALID
MIN
t HZ
10
20
70
5
3
-701/708
OUTPUT
VALID
t HZ
t OHZ
t BHZ
UNDEFINED
MAX
20
8
8
High-Z
©2004 Micron Technology, Inc. All rights reserved.
MIN
10
25
85
8 MEG x 16
5
3
-856
MAX
20
8
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns

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