MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 45

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 28: Burst READ Timing Parameters—BCR[8] = 0
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
1. Non-default BCR settings for continuous burst READ, BCR[8] = 0: WAIT active LOW; WAIT asserted during delay. Do not
2. CE# must not remain LOW longer than
3. WAIT asserts for anywhere from LC to 2LC cycles. LC = Latency Code (BCR[13:11]).
ACLK
CLK
DQ[15:0]
LB#/UB#
cross row boundaries with fixed latency.
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
MIN MAX MIN MAX MIN MAX
9.62
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OH
OL
OL
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
-701
Figure 38: Continuous Burst READ Showing an Output Delay
with BCR[8] = 0 for Variable Latency End-of-Row Condition
7
t CLK
12.5
OUTPUT
VALID
-708
9
t KHTL
OUTPUT
VALID
15
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
t
End of Row
CEM.
11
UNITS
ns
ns
45
NOTE 2
NOTE 3
SYMBOL
t
t
KHTL
KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t KHTL
MIN MAX MIN MAX MIN MAX
2
-701
t ACLK
7
OUTPUT
VALID
2
-708
©2004 Micron Technology, Inc. All rights reserved.
9
OUTPUT
VALID
8 MEG x 16
t KOH
2
-856
DON’T CARE
11
UNITS
ns
ns