MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 55

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 40: WRITE Timing Parameters—Burst READ Interrupted
Table 41: READ Timing Parameters—Burst READ Interrupted
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
SYMBOL
t
t
t
t
t
t
t
1. Non-default BCR settings for burst WRITE interrupted by burst WRITE or READ in variable latency mode: Variable latency;
2. Burst interrupt shown on first allowable clock (i.e., after first data word written).
3. CE# can stay LOW between burst operations, but CE# must not remain LOW longer than
CLK
CSP
HD
ACLK
BOE
CLK
CSP
latency code two (three clocks); WAIT active LOW; WAIT asserted during delay. All bursts shown for variable latency; no
refresh collision.
MIN MAX MIN MAX MIN MAX
MIN MAX MIN MAX MIN MAX
9.62
9.62
2nd Cycle WRITE
2nd Cycle WRITE
2nd Cycle WRITE
3
3
2
-701
-701
Figure 48: Burst WRITE Interrupted by Burst WRITE or READ—
DQ[15:0] IN
LB#/UB#
A[22:0]
20
20
20
ADV#
7
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
12.5
IH
IH
IL
12.5
IL
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
IH
IH
IL
2
4
4
High-Z
-708
-708
t CSP
t SP
20
20
20
t SP
t SP
9
ADDRESS
VALID
t HD
t HD
t HD
High-Z
15
15
5
5
2
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
-856
2nd Cycle READ
2nd Cycle READ
2nd Cycle READ
Variable Latency Mode
DQ[15:0] OUT
20
20
11
20
t CLK
LB#/UB#
OE#
UNITS
UNITS
t SP
t SP t HD
D[0]
ns
ns
ns
ns
ns
ns
ns
t HD
V
V
V
V
V
V
IH
IL
IH
IL
OH
OL
t SP
t SP t HD
t SP t HD
ADDRESS
ADDRESS
t SP
55
VALID
VALID
t HD
t KHTL
WRITE Burst interrupted with new WRITE or READ. See Note 2.
SYMBOL
t
t
SYMBOL
t
t
t
t
KHTL
SP
HD
KOH
OHZ
SP
V
V
OH
OL
High-Z
t CEM (
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t ACLK
t BOE
NOTE 3
MIN MAX MIN MAX MIN MAX
MIN MAX MIN MAX MIN MAX
3
2
2
3
t SP
OUTPUT
)
VALID
-701
-701
D[0]
t KOH
t HD
7
8
D[1]
OUTPUT
VALID
DON’T CARE
t
CEM.
3
2
2
3
D[2]
-708
OUTPUT
-708
VALID
©2004 Micron Technology, Inc. All rights reserved.
9
8
D[3]
OUTPUT
8 MEG x 16
VALID
t HD
t HD
t OHZ
UNDEFINED
3
2
2
3
-856
-856
High-Z
11
8
UNITS
UNITS
ns
ns
ns
ns
ns
ns