MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 56

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 42: WRITE Timing Parameters—Burst READ Interrupted
Table 43: READ Timing Parameters—Burst READ Interrupted
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
1. Non-default BCR settings for burst WRITE interrupted by burst WRITE or READ in fixed latency mode: Fixed latency; latency
2. Burst interrupt shown on first allowable clock (i.e., after first data word written).
3. CE# can stay LOW between burst operations, but CE# must not remain LOW longer than
Figure 49: Burst WRITE Interrupted by Burst WRITE or READ—Fixed Latency Mode
AVH
CLK
CSP
HD
ACLK
BOE
CLK
CSP
code two (three clocks); WAIT active LOW; WAIT asserted during delay.
MIN MAX MIN MAX MIN MAX
MIN MAX MIN MAX MIN MAX
9.62
9.62
2nd Cycle WRITE
2nd Cycle WRITE
2nd Cycle WRITE
2
3
2
3
-701
-701
DQ[15:0] IN
LB#/UB#
A[22:0]
ADV#
WAIT
20
20
20
WE#
7
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
IH
IL
IH
IL
12.5
12.5
4
2
4
2
High-Z
-708
-708
2nd Cycle READ
2nd Cycle READ
2nd Cycle READ
DQ[15:0] OUT
t CSP
t SP
t SP
t SP
20
20
20
9
ADDRESS
VALID
t HD
t HD
LB#/UB#
High-Z
t AVH
OE#
15
15
2
5
2
5
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
-856
V
V
V
V
V
V
IH
IL
IH
IL
OL
OH
t SP
t CLK
20
11
20
20
t SP
UNITS
UNITS
t SP t HD
t KADV
D[0]
ns
ns
ns
ns
ns
ns
ns
ns
t HD
t SP
t SP
t SP t HD
ADDRESS
ADDRESS
VALID
VALID
56
t HD
t KHTL
WRITE Burst interrupted with new WRITE or READ. See Note 2.
t AVH
SYMBOL
SYMBOL
t
t
t
t
t
t
t
HD
KOH
OHZ
SP
KADV
KHTL
SP
V
V
OH
OL
High-Z
t CEM (
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t BOE
t ACLK
NOTE 3
MIN MAX MIN MAX MIN MAX
MIN MAX MIN MAX MIN MAX
t SP
OUTPUT
2
2
3
4
3
)
VALID
D[0]
-701
-701
t KOH
t HD
7
8
D[1]
OUTPUT
VALID
DON’T CARE
2
2
3
D[2]
6
3
OUTPUT
VALID
t
-708
-708
CEM.
©2004 Micron Technology, Inc. All rights reserved.
D[3]
8
9
OUTPUT
VALID
8 MEG x 16
t HD
t HD
t OHZ
UNDEFINED
2
2
3
6
3
High-Z
-856
-856
11
8
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns