MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 40

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 23: Burst READ Timing Parameters—Single Access, Variable Latency
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
t
ABA
ACLK
BOE
CEM
CEW
CLK
CSP
HD
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
MIN MAX MIN MAX MIN MAX
9.62
Figure 33: Single-Access Burst READ Operation—Variable Latency
1
3
2
-701
7.5
DQ[15:0]
35
20
LB#/UB#
7
4
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
12.5
1
4
2
-708
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IL
IL
IH
IL
IH
IL
IH
OL
IH
IH
IL
IH
IH
IL
OH
OL
OH
7.5
46
20
9
4
High-Z
READ Burst Identified
15
1
5
2
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
t
ADDRESS
t
SP
CSP
-856
t
t
(WE# = HIGH)
t
VALID
SP
SP
t
SP
CEW
7.5
55
11
20
t
4
HD
t
HD
t
HD
High-Z
t
UNITS
CLK
t
ns
ns
ns
µs
ns
ns
ns
ns
KHKL
t
ABA
t
40
t
CEM
KP
SYMBOL
t
t
t
t
t
t
t
t
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
t
OLZ
t
BOE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
ACLK
KHTL
DON’T CARE
MIN MAX MIN MAX MIN MAX
OUTPUT
2
3
3
3
t
HD
VALID
t
-701
KP
t
1.6
HD
t
KOH
8
7
8
t
OHZ
t
HZ
2
4
3
3
UNDEFINED
-708
High-Z
©2004 Micron Technology, Inc. All rights reserved.
1.8
8
9
8
8 MEG x 16
2
5
3
3
-856
2.0
11
8
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns