MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 31

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 13: Deep Power-Down Specifications
NOTE:
Table 14: Capacitance
NOTE:
NOTE:
NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
DESCRIPTION
DESCRIPTION
Deep Power-Down
Input Capacitance
Input/Output Capacitance (DQ)
1. These parameters are verified in device characterization and are not 100% tested.
1. AC test inputs are driven at V
2. Input timing begins at V
3. Output timing ends at V
Typical (TYP) I
All tests are performed with the outputs configured for default setting of half drive strength (BCR[5:4] = 01b).
ZZ
value applies across all operating temperatures and voltages.
Input
Figure 26: AC Input/Output Reference Waveform
V
V
CC
SS
CC
CC
1
Q
Q
Q/2.
Q/2.
CC
Q for a logic 1 and V
V
T
CC
Figure 27: AC Output Load Circuit
C
V
Q /2
= +25ºC; f = 1 MHz;
CC
CONDITIONS
, V
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
V
2
V
IN
CONDITIONS
CC
DUT
IN
= V
Q = 1.95V; +85°C
= 0V
CC
Q or 0V;
Test Point
SS
Q for a logic 0. Input rise and fall times (10% to 90%) < 1.6ns.
Test Points
31
SYMBOL
30pF
50Ω
C
C
IO
IN
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
ZZ
VccQ/2
MIN
2.0
3.5
V
TYP
CC
3
Q/2
MAX
3
6
6
Output
©2004 Micron Technology, Inc. All rights reserved.
MAX
8 MEG x 16
25
UNITS
pF
pF
UNITS
NOTES
µA
1
1