MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 41

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 24: Burst READ Timing Parameters—4-Word Burst
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
t
t
ABA
ACLK
BOE
CBPH
CEM
CEW
CLK
CSP
HD
DQ[15:0]
LB#/UB#
Non-default BCR settings: Latency code two (three clocks); WAIT active LOW; WAIT asserted during delay.
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
MIN MAX MIN MAX MIN MAX
9.62
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
5
1
3
2
-701
Figure 34: 4-Word Burst READ Operation—Variable Latency
7.5
35
20
7
4
High-Z
READ Burst Identified
12.5
t SP
t CSP
ADDRESS
t SP
t SP
(WE# = HIGH)
t SP
6
1
4
2
VALID
t CEW
-708
t
HD
t HD
t HD
7.5
46
20
9
4
High-Z
15
8
1
5
2
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
t ABA
t OLZ
7.5
55
11
20
4
t KHKL
UNITS
t BOE
t ACLK
ns
ns
ns
ns
µs
ns
ns
ns
ns
t KHTL
t CLK
41
OUTPUT
VALID
t CEM
SYMBOL
t
t
t
t
t
t
t
t
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
t KOH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUTPUT
VALID
MIN MAX MIN MAX MIN MAX
2
3
3
3
t KP
-701
1.6
8
7
8
OUTPUT
VALID
2
4
3
3
-708
DON’T CARE
©2004 Micron Technology, Inc. All rights reserved.
t KP
1.8
OUTPUT
VALID
8
9
8
8 MEG x 16
t HD
t HD
t
t
OHZ
2
5
3
3
HZ
-856
t CBPH
UNDEFINED
2.0
11
8
8
High-Z
UNITS
ns
ns
ns
ns
ns
ns
ns
ns