MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 18

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
Figure 15: Register READ, Synchronous Mode Followed by READ ARRAY Operation
1. Non-default BCR settings for synchronous mode register READ followed by READ ARRAY operation: Latency code two
2. A[19:18] = 00b to read RCR, 10b to read BCR, and 01b to read DIDR.
3. CE# must remain LOW to complete a burst-of-one WRITE. WAIT must be monitored—additional WAIT cycles caused by
(three clocks); WAIT active LOW; WAIT asserted during delay.
refresh collisions require a corresponding number of additional CE# LOW cycles.
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WAIT
WE#
OE#
CLK
CRE
CE#
2
High-Z
Latch Control Register Value
t CSP
t SP
t SP
t SP
t SP
t CW
t HD
t HD
t HD
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
t ABA
t OLZ
Latch Control Register Address
t BOE
t ACLK
VALID
18
CR
t KOH
t HD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CBPH
t HZ
t OHZ
High-Z
3
ADDRESS
ADDRESS
DON’T CARE
©2004 Micron Technology, Inc. All rights reserved.
8 MEG x 16
UNDEFINED
VALID
DATA