MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 30

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 12: Partial Array Refresh Specifications and Conditions
NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
DESCRIPTION
Partial Array Refresh Standby
Current
I
tion.
PAR
140
130
120
110
100
90
80
70
60
50
40
30
20
10
(MAX) values measured at 85°C. I
0
–30
–20
Figure 25: Typical Refresh Current vs. Temperature (I
–10
0
V
IN
CONDITIONS
CE# = V
= V
10
CC
PAR
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
Q or 0V,
Temperature (C)
CC
20
might be slightly higher for up to 500ms after changes to the PAR array parti-
Q
30
I
PAR
40
30
SYMBOL
Standard Power
50
Low-Power
(no desig.)
Option
(L)
60
Micron Technology, Inc., reserves the right to change products or specifications without notice.
70
80
PARTITION
ARRAY
Full
Full
1/2
1/4
1/8
1/2
1/4
1/8
0
0
90
©2004 Micron Technology, Inc. All rights reserved.
TCR
8 MEG x 16
PAR = Full Array
PAR = 1/2 of Array
PAR = 1/4 of Array
PAR = 1/8 of Array
PAR = None of Array
)
MAX
200
170
155
150
140
160
130
115
110
100
UNITS
µA
µA