MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 28

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Electrical Characteristics and Conditions
Table 10: Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
PARAMETER
Voltage to Any Ball Except Vcc, VccQ Relative to Vss
Voltage on Vcc Supply Relative to Vss
Voltage on VccQ Supply Relative to Vss
Storage Temperature (plastic)
Operating Temperature (case)
Soldering Temperature and Time
Stresses greater than those listed may cause perma-
Wireless
Industrial
10s (solder ball only)
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
28
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
–0.50V to (4.0V or VccQ + 0.3V, whichever is less)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
–55ºC to +150ºC
–0.2V to +2.45V
–0.2V to +2.45V
–30ºC to +85ºC
–40ºC to +85ºC
RATING
+260ºC
©2004 Micron Technology, Inc. All rights reserved.
8 MEG x 16