MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 29

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

Table 11: Electrical Characteristics and Operating Conditions
Wireless Temperature (-30ºC < T
NOTE:
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
DESCRIPTION
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Asynchronous Random READ/
WRITE
Asynchronous Page READ
Initial Access, Burst READ/WRITE
Continuous Burst READ
Continuous Burst WRITE
Standby Current
1. Input signals may overshoot to VccQ + 1.0V for periods less than 2ns during transitions.
2. Input signals may undershoot to Vss - 1.0V for periods less than 2ns during transitions.
3. BCR[5:4] = 01b (default setting of one-half drive strength).
4. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current
5. I
required to drive output capacitance expected in the actual system.
must be driven to either V
standby mode.
SB
(MAX) values measured with PAR set to FULL ARRAY and at +85°C. In order to achieve low standby current, all inputs
CC
C
Q or V
< +85ºC); Industrial Temperature (-40ºC < T
V
V
V
CONDITIONS
Chip Disabled
IN
Chip Enabled,
IN
I
I
IN
OE# = V
OL
OH
CE# = V
= V
= V
SS
= 0 to V
I
OUT
= +0.2mA
= -0.2mA
. I
CC
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
CC
SB
Q or 0V
Q or 0V
= 0
IH
might be slightly higher for up to 500ms after power-up, or when entering
CC
CC
or
Q
Q
I
V
I
I
CC
V
I
CC
I
CC
V
V
V
V
I
CC
CC
I
CC
I
LO
OH
SB
OL
CC
LI
3W
IH
IL
1P
3R
1
2
Q
SYMBOL
Low-Power (L)
29
Standard
104 MHz
104 MHz
104 MHz
W: 1.8V
80 MHz
66 MHz
80 MHz
66 MHz
80 MHz
66 MHz
-70
-85
-70
-85
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
0.80 V
C
CC
< +85ºC)
-0.20
MIN
Q - 0.4
1.7
1.7
CC
Q
V
0.20 V
CC
MAX
1.95
1.95
Q + 0.2
200
160
0.4
25
22
15
12
35
30
25
30
25
20
35
30
25
1
1
©2004 Micron Technology, Inc. All rights reserved.
CC
Q
8 MEG x 16
UNITS
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
NOTES
1
2
3
3
4
4
4
4
4
5