MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 42

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 25: Burst READ Timing Parameters—Single Access, Fixed Latency
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
t
t
t
AA
AADV
ACLK
AVH
BOE
CEM
CEW
CLK
CO
CSP
Non-default BCR settings: Fixed latency; latency code four (five clocks); WAIT active LOW; WAIT asserted during delay.
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WAIT
MIN MAX MIN MAX MIN MAX
9.62
WE#
OE#
CLK
CE#
2
1
3
Figure 35: Single-Access Burst READ Operation—Fixed Latency
-701
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
7.5
70
70
20
70
7
4
12.5
High-Z
2
1
4
READ Burst Identified
-708
ADDRESS
t
CSP
t
t
t
(WE# = HIGH)
t
VALID
t
SP
SP
SP
SP
CEW
7.5
70
70
20
70
9
4
t
HD
t
AVH
t
HD
High-Z
15
t
2
1
5
CLK
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
7.5
85
85
11
20
85
4
UNITS
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
t
t
AADV
AA
t
CO
42
t
t
CEM
KP
SYMBOL
t
t
t
t
t
t
t
t
t
HD
HZ
KHKL
KHTL
KOH
KP
OHZ
OLZ
SP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN MAX MIN MAX MIN MAX
2
2
3
3
3
t
-701
KHKL
t
OLZ
t
BOE
1.6
8
7
8
t
ACLK
t
KHTL
DON’T CARE
2
2
4
3
3
OUTPUT
t
HD
VALID
t
-708
KP
©2004 Micron Technology, Inc. All rights reserved.
1.8
t
t
8
9
8
HD
KOH
t
8 MEG x 16
OHZ
t
HZ
2
2
5
3
3
UNDEFINED
-856
High-Z
2.0
11
8
8
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns