MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 50

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 33: Burst WRITE Timing Parameters
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
t
t
t
t
t
t
t
1. Non-default BCR settings for burst WRITE operation in variable latency mode: Latency code two (three clocks); WAIT
2. WAIT asserts for LC cycles for both fixed and variable latency. LC = Latency Code (BCR[13:11]).
3.
AS
CBPH
CEM
CEW
CLK
CSP
HD
DQ[15:0]
LB#/UB#
active LOW; WAIT asserted during delay; burst length four; burst wrap enabled.
t
A[22:0]
AS required if
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MIN MAX MIN MAX MIN MAX
9.62
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
0
5
1
3
2
-701
Figure 43: Burst WRITE Operation—Variable Latency Mode
t
t AS
t AS
CSP > 20ns.
7.5
4
WRITE Burst Identified
3
3
(WE# = LOW)
t SP
12.5
t CSP
t SP
ADDRESS
t SP
High-Z
0
6
1
4
2
t CEW
VALID
-708
t HD
t HD
t HD
7.5
4
15
0
8
1
5
2
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
NOTE 2
7.5
4
t CLK
t KHTL
UNITS
ns
ns
µs
ns
ns
ns
ns
t SP
50
t SP t HD
D[1]
t CEM
SYMBOL
t
t
t
t
t
t
HZ
KADV
KHKL
KHTL
KP
SP
t HD
t KP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[2]
MIN MAX MIN MAX MIN MAX
4
3
3
-701
t KP
1.6
8
7
D[3]
6
4
3
-708
t KHKL
©2004 Micron Technology, Inc. All rights reserved.
1.8
D[0]
8
9
8 MEG x 16
t HD
6
5
3
t KADV
t HZ
-856
t CBPH
DON’T CARE
2.0
11
8
High-Z
UNITS
ns
ns
ns
ns
ns
ns