AT91SAM7X256B-CU Atmel, AT91SAM7X256B-CU Datasheet - Page 124
![IC MCU 256KB FLASH 100TFBGA](/photos/6/89/68968/313-100-cbga_sml.jpg)
AT91SAM7X256B-CU
Manufacturer Part Number
AT91SAM7X256B-CU
Description
IC MCU 256KB FLASH 100TFBGA
Manufacturer
Atmel
Series
AT91SAMr
Specifications of AT91SAM7X256B-CU
Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
CAN, Ethernet, I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
62
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TFBGA
Processor Series
91S
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
64 KB
Interface Type
CAN, Ethernet, SPI, I2S, TWI, USART, USB
Maximum Clock Frequency
55 MHz
Number Of Programmable I/os
62
Number Of Timers
3
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 40 C to + 85 C
Package
100TFBGA
Device Core
ARM7TDMI
Family Name
91S
Maximum Speed
55 MHz
On-chip Adc
8-chx10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
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Manufacturer
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20.2.5.2
20.2.5.3
124
AT91SAM7X512/256/128 Preliminary
Flash Write Command
Flash Full Erase Command
This command is used to write the Flash contents.
The Flash memory plane is organized into several pages. Data to be written are stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-8.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 20-9.
Step
1
2
3
4
5
...
n
n+1
n+2
n+3
...
Step
1
2
• before access to any page other than the current one
• when a new command is validated (MODE = CMDE)
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write Command
Full Erase Command
MODE[3:0]
CMDE
ADDR0
ADDR1
DATA
DATA
...
ADDR0
ADDR1
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[15:0]
WP or WPL or EWP or EWPL
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
6120H–ATARM–17-Feb-09
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