AT91SAM7X256B-CU Atmel, AT91SAM7X256B-CU Datasheet - Page 124

• Manufacturer Part Number: AT91SAM7X256B-CU
• Description: IC MCU 256KB FLASH 100TFBGA
• Manufacturer: Atmel
• Series: AT91SAMr

Specifications of AT91SAM7X256B-CU

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 55MHz
• Connectivity: CAN, Ethernet, I²C, SPI, SSC, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number Of I /o: 62
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 1.95 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TFBGA
• Processor Series: 91S
• Core: ARM7TDMI
• Data Bus Width: 32 bit
• Data Ram Size: 64 KB
• Interface Type: CAN, Ethernet, SPI, I2S, TWI, USART, USB
• Maximum Clock Frequency: 55 MHz
• Number Of Programmable I/os: 62
• Number Of Timers: 3
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 85 C
• Package: 100TFBGA
• Device Core: ARM7TDMI
• Family Name: 91S
• Maximum Speed: 55 MHz
• On-chip Adc: 8-chx10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

20.2.5.2
20.2.5.3
124
AT91SAM7X512/256/128 Preliminary
Flash Write Command
Flash Full Erase Command
This command is used to write the Flash contents.
The Flash memory plane is organized into several pages. Data to be written are stored in a load
buffer that corresponds to a Flash memory page. The load buffer is automatically flushed to the
Flash:
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-8.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 20-9.
Step
1
2
3
4
5
...
n
n+1
n+2
n+3
...
Step
1
2
• before access to any page other than the current one
• when a new command is validated (MODE = CMDE)
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write Command
Full Erase Command
MODE[3:0]
CMDE
ADDR0
ADDR1
DATA
DATA
...
ADDR0
ADDR1
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[15:0]
WP or WPL or EWP or EWPL
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
Memory Address LSB
Memory Address
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
6120H–ATARM–17-Feb-09