MC9S08GT32CFDE Freescale Semiconductor, MC9S08GT32CFDE Datasheet - Page 261

• Manufacturer Part Number: MC9S08GT32CFDE
• Description: IC MCU 32K FLASH 20MHZ 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT32CFDE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Controller Family/series: HCS08
• No. Of I/o's: 39
• Ram Memory Size: 2KB
• Cpu Speed: 40MHz
• No. Of Timers: 2
• Rohs Compliant: Yes
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device was
qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the
device no longer meets the device specification requirements. Complete dc parametric and functional
testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to
V
Low-voltage detection threshold — high range
Low-voltage detection threshold — low range
Low-voltage warning threshold — high range
Low-voltage warning threshold — low range
DD
0 < f
0 < f
Bus
Bus
< 8 MHz
< 20 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
MM circuit description
HBM circuit description
Parameter
Parameter
(Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Sheet 1 of 2)
(V
(V
(V
(V
(V
(V
(V
(V
Table A-3. ESD Protection Characteristics
DD
DD
DD
DD
DD
DD
DD
DD
falling)
rising)
falling)
rising)
falling)
rising)
falling)
rising)
MC9S08GB/GT Data Sheet, Rev. 2.3
Symbol
V
V
V
V
V
V
LVWH
LVDH
LVWL
LVDL
RAM
DD
Symbol
V
V
THHBM
THMM
Electrostatic Discharge (ESD) Protection Characteristics
2.08
2.08
2.16
1.80
1.88
2.35
2.35
2.08
2.16
1.0
Min
1.8
2
Value
2000
Typical
200
2.19
1.82
1.90
2.40
2.40
2.19
2.1
2.1
1
Unit
V
V
Max
2.27
1.91
1.99
2.27
3.6
3.6
2.2
2.5
2.2
—
Unit
V
V
V
V
V
V
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