MC9S08GT32CFDE Freescale Semiconductor, MC9S08GT32CFDE Datasheet - Page 47

IC MCU 32K FLASH 20MHZ 48-QFN

MC9S08GT32CFDE

Manufacturer Part Number
MC9S08GT32CFDE
Description
IC MCU 32K FLASH 20MHZ 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets

Specifications of MC9S08GT32CFDE

Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-QFN
Controller Family/series
HCS08
No. Of I/o's
39
Ram Memory Size
2KB
Cpu Speed
40MHz
No. Of Timers
2
Rohs Compliant
Yes
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
It is possible to program the entire array through the single-wire background debug interface. Because no
special voltages are needed for FLASH erase and programming operations, in-application programming
is also possible through other software-controlled communication paths. For a more detailed discussion of
in-circuit and in-application programming, refer to the HCS08 Family Reference Manual, Volume I,
Freescale Semiconductor document order number HCS08RMv1/D.
4.4.1
Features of the FLASH memory include:
4.4.2
Before any program or erase command can be accepted, the FLASH clock divider register (FCDIV) must
be written to set the internal clock for the FLASH module to a frequency (f
200 kHz (see
reset initialization. FCDIV cannot be written if the access error flag, FACCERR in FSTAT, is set. The user
must ensure that FACCERR is not set before writing to the FCDIV register. One period of the resulting
clock (1/f
of these timing pulses is used by the command processor to complete a program or erase command.
Table 4-5
of FCLK (f
of cycles of FCLK and as an absolute time for the case where t
shown include overhead for the command state machine and enabling and disabling of program and erase
voltages.
Freescale Semiconductor
FLASH Size
— MC9S08GB60/MC9S08GT60 — 61268 bytes (120 pages of 512 bytes each)
— MC9S08GB32/MC9S08GT32— 32768 bytes (64 pages of 512 bytes each)
— MC9S08GT16 — 16384 bytes (32 pages of 512 bytes each)
Single power supply program and erase
Command interface for fast program and erase operation
Up to 100,000 program/erase cycles at typical voltage and temperature
Flexible block protection
Security feature for FLASH and RAM
Auto power-down for low-frequency read accesses
FCLK
shows program and erase times. The bus clock frequency and FCDIV determine the frequency
Features
Program and Erase Times
FCLK
1
Table
Byte program
Byte program (burst)
Page erase
Mass erase
) is used by the command processor to time program and erase pulses. An integer number
Excluding start/end overhead
). The time for one cycle of FCLK is t
4.6.1). This register can be written only once, so normally this write is done during
Parameter
Table 4-5. Program and Erase Times
MC9S08GB/GT Data Sheet, Rev. 2.3
Cycles of FCLK
20,000
4000
9
4
FCLK
= 1/f
FCLK
FCLK
Time if FCLK = 200 kHz
= 5 µs. Program and erase times
. The times are shown as a number
FCLK
100 ms
20 µs
20 ms
45 µs
) between 150 kHz and
1
FLASH
47

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