DF2378BVFQ35V Renesas Electronics America, DF2378BVFQ35V Datasheet - Page 275

IC H8S/2378 MCU FLASH 144-LQFP

DF2378BVFQ35V

Manufacturer Part Number
DF2378BVFQ35V
Description
IC H8S/2378 MCU FLASH 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378BVFQ35V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2378BVFQ35V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
• RAS Up Mode
φ
Address bus
RASn (CSn)
UCAS, LCAS
RD
OE
Data bus
Note: n = 2 to 5
To select RAS up mode, clear the RCDM bit to 0 in DRAMCR. Each time access to DRAM
space is interrupted and another space is accessed, the RAS signal goes high again. Burst
operation is only performed if DRAM space is continuous. Figure 6.33 shows an example of
the timing in RAS up mode.
Figure 6.33 Example of Operation Timing in RAS Up Mode
T
Row address
p
DRAM space read
T
r
(RAST = 0, CAST = 0)
Column address 1 Column address 2
T
c1
T
c2
Rev.7.00 Mar. 18, 2009 page 207 of 1136
T
DRAM space
c1
read
Section 6 Bus Controller (BSC)
T
c2
External address
Normal space
T
1
REJ09B0109-0700
read
T
2

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