DF2378BVFQ35V Renesas Electronics America, DF2378BVFQ35V Datasheet - Page 923

• Manufacturer Part Number: DF2378BVFQ35V
• Description: IC H8S/2378 MCU FLASH 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

The FLMCR1, FLMCR2, EBR1, and EBR2 settings are retained, but program mode or erase
mode is forcibly aborted at the point at which the error occurred. Program mode or erase mode
cannot be re-entered by re-setting the P or E bit. However, since PV and EV bit setting is enabled,
and a transition can be made to verify mode. The error protection state can be canceled by a reset
or in hardware standby mode.
20.9
In programmer mode, a PROM programmer can perform programming/erasing via a socket
adapter, just like for a discrete flash memory. Use a PROM programmer which supports the
Renesas 512-kbyte flash memory on-chip MCU device type (FZTAT512V3A). A 12-MHz input
clock is needed.
20.10
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
• Standby mode
Table 20.7 shows the correspondence between the operating modes of this LSI and the flash
memory. When the flash memory returns to normal operation from a standby state, a power
supply circuit stabilization period is needed. When the flash memory returns to its normal
operating state, bits STS3 to STS0 in SBYCR must be set to provide a wait time of at least 100 µs,
even when the external clock is being used.
Table 20.7 Flash Memory Operating States
Operating Mode
Active mode
Sleep mode
Standby mode
The flash memory can be read.
All flash memory circuits are halted.
Programmer Mode
Power-Down States for Flash Memory
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
Flash Memory Operating State
Normal operating state
Normal operating state
Standby state
Rev.7.00 Mar. 18, 2009 page 855 of 1136
REJ09B0109-0700