DF2378BVFQ35V Renesas Electronics America, DF2378BVFQ35V Datasheet - Page 313

• Manufacturer Part Number: DF2378BVFQ35V
• Description: IC H8S/2378 MCU FLASH 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378BVFQ35V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 35MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(2) Read Data Extension
If the CKSPE bit is set to 1 in DRACCR when the continuous synchronous DRAM space is read-
accessed in DMAC/EXDMAC single address mode, the establishment time for the read data can
be extended by clock suspend mode. The number of states for insertion of the read data extension
cycle (Tsp) is set in bits RDXC1 and RDXC0 in DRACCR. Be sure to set the OEE bit to 1 in
DRAMCR when the read data will be extended. The extension of the read data is not in
accordance with the bits DDS and EDDS.
Figure 6.62 shows the timing chart when the read data is extended by two cycles.
Figure 6.62 Example of Timing when the Read Data Is Extended by Two States
(DDS = 1, or EDDS = 1, RDXC1 = 0, RDXC0 = 1, CAS Latency 2)
DACK or EDACK
Precharge-sel
DQMU, DQML
Address bus
SDRAMφ
Data bus
CKE
CAS
RAS
WE
φ
PALL ACTV
address
Column
T
p
address
address
Row
Row
T
r
READ
T
c1
Rev.7.00 Mar. 18, 2009 page 245 of 1136
T
cl
NOP
T
c2
Column address
Section 6 Bus Controller (BSC)
T
sp1
T
sp2
REJ09B0109-0700