DF2378BVFQ35V Renesas Electronics America, DF2378BVFQ35V Datasheet - Page 988
![IC H8S/2378 MCU FLASH 144-LQFP](/photos/12/29/122922/df2378bvfq35v_sml.jpg)
DF2378BVFQ35V
Manufacturer Part Number
DF2378BVFQ35V
Description
IC H8S/2378 MCU FLASH 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2378BVFQ35V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2378BVFQ35V
Manufacturer:
Renesas Electronics America
Quantity:
135
Company:
Part Number:
DF2378BVFQ35V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 21 Flash Memory (0.18-μm F-ZTAT Version)
21.5
There are two kinds of flash memory program/erase protection: hardware and software protection.
21.5.1
Programming and erasing of flash memory is forcibly disabled or suspended by hardware
protection. In this state, the downloading of a on-chip program and initialization are possible.
However, an activated program for programming or erasure cannot program or erase locations in a
user MAT, and the error in programming/erasing is reported in the parameter FPFR.
Table 21.9 Hardware Protection
Item
Reset/standby
protection
Rev.7.00 Mar. 18, 2009 page 920 of 1136
REJ09B0109-0700
Protection
Hardware Protection
Description
•
•
The program/erase interface
registers are initialized in the power-
on reset state (including a power-on
reset by the WDT) and standby
mode and the program/erase-
protected state is entered.
The reset state will not be entered by
a reset using the RES pin unless the
RES pin is held low until oscillation
has stabilized after power is initially
supplied. In the case of a reset
during operation, hold the RES pin
low for the RES pulse width that is
specified in the section on AC
characteristics section. If a reset is
input during programming or
erasure, data values in the flash
memory are not guaranteed. In this
case, execute erasure and then
execute program again.
Download
Function to be Protected
Program/Erase
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