UPD78F0988AGC-8BS Renesas Electronics America, UPD78F0988AGC-8BS Datasheet - Page 331

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UPD78F0988AGC-8BS

Manufacturer Part Number
UPD78F0988AGC-8BS
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPD78F0988AGC-8BS

Lead Free Status / Rohs Status
Supplier Unconfirmed
The entry RAM area is explained in detail below.
(a) Flash memory start address
(b) Number of bytes written in flash memory
(c) Write time data
(d) Erase time data
(e) Write data storage buffer starting address
(f) Writeback time
This is the flash memory address value used by the _FlashByteWrite subroutine.
Area number and number of bytes written in the flash memory.
Set the following values according to the operating frequency.
Setting value = Erase time (s)
(Erase time range: 0.2 to 20 seconds, up to 100 times in 20 seconds are possible, assuming that one
erase time is 0.2 seconds)
Example Erase time: 0.2 seconds, operating frequency: 5 MHz
This area contains the starting address of the write data storage buffer area. The RAM data (write data)
specified by the address data in this area is written in the flash memory (_FlashByteWrite subroutine).
The data in this area is specified as the starting address and it is possible to specify up to a maximum
of 256 bytes of write data.
Setting value = Writeback time (s)
(Up to 30 times in 1.5 seconds are possible, assuming that one writeback time is 0.05 seconds.)
Example Writeback time: 0.05 seconds, operating frequency: 5 MHz
1.00 to 1.28
1.29 to 2.56
2.57 to 5.12
5.13 to 8.38
8.39 to 10.0
f
X
(MHz)
Setting value = 0.2
Setting value = 0.05
Setting Value
20H
40H
60H
80H
A0H
= 1954 (decimal)
= 7A2 (hexadecimal)
= 1953 (decimal)
= 7A1 (hexadecimal)
CHAPTER 18
User’s Manual U13029EJ7V1UD
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PD78F0988A
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+ 1
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