UPD78F0988AGC-8BS Renesas Electronics America, UPD78F0988AGC-8BS Datasheet - Page 377

• Manufacturer Part Number: UPD78F0988AGC-8BS
• Manufacturer: Renesas Electronics America

Specifications of UPD78F0988AGC-8BS

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Notes 1. The recommended setting value for the step erase time is 0.2 s.
Remarks 1. The range of the operating clock during flash memory programming is not the same as the range
Operating frequency
V
V
V
Step erase time
Overall erase time per
area
Writeback time
Number of writebacks
per writeback command
Number of erase/
writebacks
Step write time
Overall write time per
word
Number of rewrites per
area
Flash Memory Programming Characteristics ( PD78F0988A, 78F0988A(A) only)
(T
(1) Write erase characteristics
PP
DD
PP
A
supply voltage
supply current
supply current
= 10 to 40 C, V
Parameter
2. The prewrite time before erasure and the erase verify time (writeback time) is not included.
3. The recommended setting value for the writeback time is 50 ms.
4. Writeback is executed once by the issuance of the writeback command. Therefore, the number of retries
5. Recommended step write time setting value is 50 s.
6. The actual write time per word is 100 s longer. The internal verify time during or after a write is not
7. When a product is first written after shipment, “erase
must be the maximum value minus the number of commands issued.
included.
Example: P: Write, E: Erase
2. When using the PG-FP3, FL-PR3 (made by Naito Densei), PG-FP4, or FL-PR4 (made by Naito
CHAPTER 20 ELECTRICAL SPECIFICATIONS (EXPANDED-SPECIFICATION PRODUCTS)
during normal operation.
Densei) the time parameters that need to be downloaded from the parameter files for write/erase
are automatically set. Unless otherwise directed, do not change the set values.
Shipped product
Shipped product
DD
f
V
I
I
T
T
T
C
C
T
T
C
= AV
X
DD
PP
Symbol
PP2
er
era
wb
wr
wrw
wb
erwb
erwr
DD
= 3.0 to 5.5 V, V
4.5 V
3.0 V
During flash memory programming
When V
When V
Note 1
When step erase time = 0.2 s Note 2
Note 3
When writeback time = 50 ms Note 4
Note 5
When step write time = 50 s
(1 word = 1 byte) Note 6
1 erase + 1 write after erase = 1 rewrite Note 7
E
V
V
PP
PP
User’s Manual U13029EJ7V1UD
DD
DD
= V
= V
< 4.5 V
P
P
5.5 V
PP2
PP2
SS
, f
X
E
E
= AV
= 8.38 MHz
Conditions
P
P
SS
= 0 V, V
E
E
write” and “write only” are both taken as one rewrite.
P: 3 rewrites
P: 3 rewrites
PP
= 9.7 to 10.3 V)
0.199
MIN.
49.4
1.0
1.0
9.7
48
48
TYP.
10.0
0.2
50
50
20
MAX.
0.201
8.38
10.3
50.6
100
520
10
40
20
60
16
52
command
Times/
s/area
Times
word
MHz
MHz
Times/
area
Unit
write-
mA
mA
back
ms
V
s
s/
375
s