ATAVRSB202 Atmel, ATAVRSB202 Datasheet - Page 218

• Manufacturer Part Number: ATAVRSB202
• Description: KIT BATT MGMT FOR ATMEGA32HVB
• Manufacturer: Atmel

Specifications of ATAVRSB202

• Main Purpose: *
• Embedded: *
• Utilized Ic / Part: *
• Primary Attributes: *
• Secondary Attributes: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

30.7.3
30.7.4
8042B–AVR–06/10
Enter Programming Mode
Chip Erase
Table 30-16. Command Byte Bit Coding
The following algorithm puts the device in parallel programming mode:
1. Make sure the chip is started as explained in
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
5. Wait at least 50 µs before sending a new command.
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
page
100 ns.
has been applied to RESET, will cause the device to fail entering programming mode.
Command Byte
1000 0000
0100 0000
0010 0000
0001 0000
0001 0001
0000 1000
0000 0100
0000 0010
0000 0011
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
43.
Command Executed
Chip Erase
Write Fuse bits
Write Lock bits
Write Flash
Write EEPROM
Read Signature Bytes and Calibration byte
Read Fuse and Lock bits
Read Flash
Read EEPROM
Table 30-14 on page 217
”Power-on Reset and Charger Connect” on
(1)
ATmega16HVB/32HVB
memories plus Lock bits. The Lock bits are
to “0000” and wait at least
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