YR0K42378FC000BA Renesas Electronics America, YR0K42378FC000BA Datasheet - Page 1133
YR0K42378FC000BA
Manufacturer Part Number
YR0K42378FC000BA
Description
KIT EVAL FOR H8S/2378
Manufacturer
Renesas Electronics America
Series
H8®r
Type
MCUr
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of YR0K42378FC000BA
Contents
Board
For Use With/related Products
H8S/2378
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 1133 of 1208
- Download datasheet (8Mb)
Table 26.40 Flash Memory Characteristics (0.18-μm F-ZTAT Version) (384 kbytes)
Conditions: V
Notes: 1. Actual programming and erase times are dependent on data characteristics.
Item
Programming time *
Erase time *
Programming time (total) *
Erase time (total) *
Programming and erase time
(total) *
Rewrite times
Data storage time *
1
2. Programming and erase times do not include data transfer time.
3. The minimum number of times for which all characteristics are guaranteed. (The
4. Rewrite characteristics are for the operating range including the minimum value.
*
2
*
guaranteed range is from 1 to the minimum number of times.)
4
1
V
Range: Normal Specifications), T
Temperature Range: Extended Temperature Range Specifications)
*
2
CC
SS
*
4
= AV
= 3.0 V to 3.6 V, AV
1
4
1
*
2
*
2
*
SS
4
*
4
= 0 V, T
1
*
2
*
4
a
Symbol
t
t
Σtp
Σt
Σt
N
t
P
E
DRP
= 0°C to 75°C (Programming/Erasing Operating Temperature
WEC
E
PE
CC
= 3.0 V to 3.6 V, V
Min.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100 *
10
a
= 0°C to 85°C (Programming/Erasing Operating
3
Typ.
1
250
500
750
3
7
10
⎯
⎯
Rev.7.00 Mar. 18, 2009 page 1065 of 1136
ref
Section 26 Electrical Characteristics
Max.
10
1500
4000
6500
9
20
29
⎯
⎯
= 3.0 V to AV
Unit
ms/
128 bytes
ms/
4 kbytes
ms/
32 kbytes
ms/
64 kbytes
s/384 kbytes
s/384 kbytes
s/384 kbytes
Times
Year
CC
REJ09B0109-0700
,
T
T
T
Test
Conditions
a
a
a
= 25°C
= 25°C
= 25°C
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